advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v good thermal dissipation r ds(on) 9m low on-resistance i d 16a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value units rthj-a maximum thermal resistance, junction-ambient 3 35 /w data & specifications subject to change without notice AP0903GYT-HF halogen-free product parameter rating drain-source voltage 30 gate-source voltage + 20 continuous drain current 3 16 13 total power dissipation thermal data parameter storage temperature range operating junction temperature range 1 3.5 201009214 -55 to 150 pulsed drain current 1 40 continuous drain current 3 -55 to 150 g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the pmpak ? 3x3 package is special for dc-dc converters application and low 1.0mm profile with backside heat sink. d d d d s s s g pmpak ? 3x3
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =10a - - 9 m ? v gs =4.5v, i d =8a - - 16 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =10a - 24 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 10 ua drain-source leakage current (t j =70 o c) v ds =24v, v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =10a - 8.7 14 nc q gs gate-source charge v ds =15v - 1.7 - nc q gd gate-drain ("miller") charge v gs =4.5v - 5 - nc t d(on) turn-on delay time 2 v ds =15v - 10 - ns t r rise time i d =1a - 7 - ns t d(off) turn-off delay time r g =6 ? ,v gs =10v - 24 - ns t f fall time r d =15 ? -8- ns c iss input capacitance v gs =0v - 635 1010 pf c oss output capacitance v ds =25v - 215 - pf c rss reverse transfer capacitance f=1.0mhz - 125 - pf r g gate resistance f=1.0mhz - 1.8 - ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2.9a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =10a, v gs =0v, - 27 - ns q rr reverse recovery charge di/dt=100a/s - 20 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. AP0903GYT-HF 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec 2
a p0903gyt-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 0.0 2.0 4.0 6.0 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 10 20 30 40 0.0 1.0 2.0 3.0 4.0 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =10a v g =10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 4 6 8 10 12 14 16 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =8a t a =25 o c 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
AP0903GYT-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 2 4 6 8 10 0 4 8 12 16 20 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =10a v ds =15v 0 200 400 600 800 1000 1200 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thia =80 /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on)
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